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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS) = 100 V(Min) *DC Current Gain: hFE = 40(Min) @ IC= 0.2 A *Low Collector Saturation Voltage: VCE(sat) = 0.3V(Max.)@ IC= 0.5 A *Complement to Type MJE253 APPLICATIONS *Designed for low power audio amplifier and low-current, high-speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B MJE243 PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation Ta=25 Collector Power Dissipation TC=25 Junction Temperature Storage Temperature Range VALUE 100 100 7 4 8 1 1.5 UNIT V V V A A A PC W 15 150 -65~150 Ti Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 8.34 83.4 UNIT /W /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC =25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(sat) VBE(on) ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain--Bandwidth Product Collector Capacitance CONDITIONS IC= 10mA; IB= 0 IC= 0.5 A ;IB= 50mA IC= 1A ;IB= 0.1A IC= 2A ;IB= 0.2A IC= 0.5A; VCE= 1V VCB= 100V; IE= 0 VCB= 100V; IE= 0;TC= 125 VEB= 7V; IC= 0 IC= 0.2 A ; VCE= 1V IC= 1A ; VCE= 1V IC= 0.1 A; VCE= 10V; ftest = 10MHz IE= 0; VCB= 10V; ftest = 0.1MHz 40 15 40 MIN 100 MJE243 MAX UNIT V 0.3 0.6 1.8 1.5 0.1 0.1 0.1 180 V V V V A mA A MHz 50 pF isc Websitewww.iscsemi.cn |
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